2016: Eli Harari, founder, and former CEO of SanDisk, foresees the inevitable scaling hurdles facing DRAM in the coming years with the advent of memory-hungry applications, and founds SunRise Memory. Simply put, DRAM density and power dissipation is unable to keep pace with the explosive demand for massive databases and large language models in AI.

2024: Our team of 40 engineers in the USA and Israel is developing the first 3D ferroelectric RAM memory as a high capacity, high bandwidth, low power system solution, by bringing together deep expertise in semiconductor device, process, design, system architecture, manufacturing integration, assembly, and test. From the get-go, starting with a clean sheet of paper, SunRise engineers designed our ferroelectric RAM to be manufacturable on existing high-volume memory fabs that have previously mastered 3D process flows (such as 3D NAND fabs).

2026 and beyond: Through 3D scaling, akin to skyscraper construction, we aim to improve memory bit density by 10X compared with DRAM. Through our revolutionary system architecture, which manages, in parallel, hundreds of independent memory banks on each chip, we expect to achieve dramatic improvements in data immediacy, accelerating the industry’s move to the memory-centric era of AI and high-performance compute. Our ferroelectric low-voltage memory cells will significantly reduce energy consumption for a greener world. Our fountain of innovations has already yielded more than 80 registered patents with many more pending.

We are at about the half-way mark on our development journey. We are set on disrupting the high end of a $100-billion DRAM market projected to grow to $200 billion over the next decade. We invite you to keep following our progress.